Nanolithography of single-layer graphene oxide films by atomic force microscopy
Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO(2) substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, sq...
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Bibliographische Detailangaben
Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 26(2010), 9 vom: 04. Mai, Seite 6164-6
|
1. Verfasser: |
Lu, Gang
(VerfasserIn) |
Weitere Verfasser: |
Zhou, Xiaozhu,
Li, Hai,
Yin, Zongyou,
Li, Bing,
Huang, Ling,
Boey, Freddy,
Zhang, Hua |
Format: | Online-Aufsatz
|
Sprache: | English |
Veröffentlicht: |
2010
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Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
|
Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't
Silicon Dioxide
7631-86-9
Graphite
7782-42-5
Silicon
Z4152N8IUI |