Nanolithography of single-layer graphene oxide films by atomic force microscopy

Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO(2) substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, sq...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 26(2010), 9 vom: 04. Mai, Seite 6164-6
1. Verfasser: Lu, Gang (VerfasserIn)
Weitere Verfasser: Zhou, Xiaozhu, Li, Hai, Yin, Zongyou, Li, Bing, Huang, Ling, Boey, Freddy, Zhang, Hua
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2010
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Silicon Dioxide 7631-86-9 Graphite 7782-42-5 Silicon Z4152N8IUI