Alkoxysilane layers compatible with copper deposition for advanced semiconductor device applications
Alkoxysilane having various functional headgroups (amino and mercapto) and morphologies was deposited by supercritical CO(2) onto a porous dielectric material to replace the metallic barrier used in semiconductor devices. These organic layers were successfully coated with Cu. The morphologies of the...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 26(2010), 11 vom: 01. Juni, Seite 8981-7
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| 1. Verfasser: |
Rébiscoul, Diane
(VerfasserIn) |
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| Weitere Verfasser: |
Perrut, Vincent,
Morel, Thierry,
Jayet, Céline,
Cubitt, Robert,
Haumesser, Paul-Henri |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2010
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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