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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1021/la9037777
|2 doi
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|a pubmed24n0649.xml
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|a (DE-627)NLM194596893
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|a (NLM)20099836
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|a DE-627
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|e rakwb
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|a eng
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1 |
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|a Ghosh, Kaushik
|e verfasserin
|4 aut
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|a Nitrogen-mediated wet-chemical formation of carbon nitride/ZnO heterojunctions for enhanced field emission
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|c 2010
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 01.07.2010
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|a Date Revised 13.04.2010
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Heterojunction structures of nanocrystalline materials are of great importance in scientific and industrial research for their potential applications in nanoscale electronics and photonics. Here, we report a simple wet-chemical method of nitrogen-mediated growth of ZnO nanocrystals on carbon nitride (CNx) nanotubes. SEM and TEM analyses show self-organized ZnO nanoflowers on CNx stems. PL spectra exhibiting a blue emission at 449 nm confirms the junction formation between CNx and ZnO. The field emission (FE) properties of CNx-ZnO film are greatly improved over those of pristine CNx. The turn-on and threshold fields for bare CNx film are 1.70 and 2.95 V/v, whereas those for CNx-ZnO hybrid are found to be 0.75 and 1.3 V/microm, respectively. This significant downshift in the turn-on and threshold fields is believed to occur via lowering of the Schottky barrier at the metal-semiconductor interface. Three-dimensionally blossomed ZnO nanopetals with multiple sharp tips effectively enhance the FE performance. Moreover, this heterojunction reinforces the electron emission lifetime and protects the CNx tubes against thermal degradation
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|a Journal Article
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1 |
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|a Kumar, Mukul
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Huafeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Maruyama, Takahiro
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ando, Yoshinori
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 26(2010), 8 vom: 20. Apr., Seite 5527-33
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
1 |
8 |
|g volume:26
|g year:2010
|g number:8
|g day:20
|g month:04
|g pages:5527-33
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| 856 |
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|u http://dx.doi.org/10.1021/la9037777
|3 Volltext
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