1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators
This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of -146 dBc/Hz,...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 57(2010), 1 vom: 19. Jan., Seite 82-7
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| 1. Verfasser: |
Zuo, Chengjie
(VerfasserIn) |
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| Weitere Verfasser: |
Van der Spiegel, Jan,
Piazza, Gianluca |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2010
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Aluminum Compounds
aluminum nitride
7K47D7P3M0 |
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