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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1021/la902879h
|2 doi
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|a pubmed24n0646.xml
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|a eng
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|a Irwin, Michael D
|e verfasserin
|4 aut
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|a Consequences of anode interfacial layer deletion. HCl-treated ITO in P3HT:PCBM-based bulk-heterojunction organic photovoltaic devices
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|c 2010
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 26.04.2010
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|a Date Revised 09.02.2010
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a In studies to simplify the fabrication of bulk-heterojunction organic photovoltaic (OPV) devices, it was found that when glass/tin-doped indium oxide (ITO) substrates are treated with dilute aqueous HCl solutions, followed by UV ozone (UVO), and then used to fabricate devices of the structure glass/ITO/P3HT:PCBM/LiF/Al, device performance is greatly enhanced. Light-to-power conversion efficiency (Eff) increases from 2.4% for control devices in which the ITO surface is treated only with UVO to 3.8% with the HCl + UVO treatment--effectively matching the performance of an identical device having a PEDOT:PSS anode interfacial layer. The enhancement originates from increases in V(OC) from 463 to 554 mV and FF from 49% to 66%. The modified-ITO device also exhibits a 4x enhancement in thermal stability versus an identical device containing a PEDOT:PSS anode interfacial layer. To understand the origins of these effects, the ITO surface is analyzed as a function of treatment by ultraviolet photoelectron spectroscopy work function measurements, X-ray photoelectron spectroscopic composition analysis, and atomic force microscopic topography and conductivity imaging. Additionally, a diode-based device model is employed to further understand the effects of ITO surface treatment on device performance
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|a Journal Article
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|a Liu, Jun
|e verfasserin
|4 aut
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|a Leever, Benjamin J
|e verfasserin
|4 aut
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|a Servaites, Jonathan D
|e verfasserin
|4 aut
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|a Hersam, Mark C
|e verfasserin
|4 aut
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|a Durstock, Michael F
|e verfasserin
|4 aut
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|a Marks, Tobin J
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 26(2010), 4 vom: 16. Feb., Seite 2584-91
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|x 1520-5827
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|g volume:26
|g year:2010
|g number:4
|g day:16
|g month:02
|g pages:2584-91
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|u http://dx.doi.org/10.1021/la902879h
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