Structure of YSi(2) nanowires from scanning tunneling spectroscopy and first principles

Exceptionally long and uniform YSi(2) nanowires are formed via self-assembly on Si(001). The in-plane width of the thinnest wires is known to be quantized in odd multiples of the silicon lattice constant. Here, we identify a class of nanowires that violates the "odd multiple" rule. The str...

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Veröffentlicht in:Applied physics letters. - 1998. - 95(2009), 12 vom: 21. Sept., Seite 123107
1. Verfasser: Iancu, V (VerfasserIn)
Weitere Verfasser: Kent, P R C, Zeng, C G, Weitering, H H
Format: Aufsatz
Sprache:English
Veröffentlicht: 2009
Zugriff auf das übergeordnete Werk:Applied physics letters
Schlagworte:Journal Article
LEADER 01000caa a22002652 4500
001 NLM192327038
003 DE-627
005 20250210223103.0
007 tu
008 231223s2009 xx ||||| 00| ||eng c
028 5 2 |a pubmed25n0641.xml 
035 |a (DE-627)NLM192327038 
035 |a (NLM)19859579 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Iancu, V  |e verfasserin  |4 aut 
245 1 0 |a Structure of YSi(2) nanowires from scanning tunneling spectroscopy and first principles 
264 1 |c 2009 
336 |a Text  |b txt  |2 rdacontent 
337 |a ohne Hilfsmittel zu benutzen  |b n  |2 rdamedia 
338 |a Band  |b nc  |2 rdacarrier 
500 |a Date Revised 22.03.2024 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a Exceptionally long and uniform YSi(2) nanowires are formed via self-assembly on Si(001). The in-plane width of the thinnest wires is known to be quantized in odd multiples of the silicon lattice constant. Here, we identify a class of nanowires that violates the "odd multiple" rule. The structure of the thinnest wire in this category is determined by comparing scanning tunneling spectroscopy measurements with the calculated surface density of states of candidate models by means of the Pendry R-factor analysis. The relative stability of the odd and even wire systems is analyzed via first-principles calculations 
650 4 |a Journal Article 
700 1 |a Kent, P R C  |e verfasserin  |4 aut 
700 1 |a Zeng, C G  |e verfasserin  |4 aut 
700 1 |a Weitering, H H  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Applied physics letters  |d 1998  |g 95(2009), 12 vom: 21. Sept., Seite 123107  |w (DE-627)NLM098165984  |x 0003-6951  |7 nnns 
773 1 8 |g volume:95  |g year:2009  |g number:12  |g day:21  |g month:09  |g pages:123107 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_21 
912 |a GBV_ILN_24 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 95  |j 2009  |e 12  |b 21  |c 09  |h 123107