Nonvolatile resistive switching memory properties of thermally annealed titania precursor/polyelectrolyte multilayers

We describe a novel and versatile approach for preparing resistive switching memory devices based on transition metal oxides. A titania precursor and poly(allyamine hydrochloride) (PAH) layers were deposited alternately onto platinum (Pt)-coated silicon substrates using electrostatic interactions. T...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 25(2009), 19 vom: 06. Okt., Seite 11276-81
1. Verfasser: Lee, Chanwoo (VerfasserIn)
Weitere Verfasser: Kim, Inpyo, Shin, Hyunjung, Kim, Sanghyo, Cho, Jinhan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2009
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Electrolytes Polymers titanium dioxide 15FIX9V2JP Platinum 49DFR088MY Titanium D1JT611TNE
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520 |a We describe a novel and versatile approach for preparing resistive switching memory devices based on transition metal oxides. A titania precursor and poly(allyamine hydrochloride) (PAH) layers were deposited alternately onto platinum (Pt)-coated silicon substrates using electrostatic interactions. The multilayers were then converted to TiO2 nanocomposite (TiO2 NC) films after thermal annealing. A top electrode was coated on the TiO2 NC films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (approximately 0.4 VRESET and 1.3 VSET), which is comparable to that observed in conventional devices fabricated by sputtering or metal organic chemical vapor deposition processes. The reported approach offers new opportunities for preparing inorganic material-based resistive switching memory devices with tailored electronic properties, allowing facile solution processing 
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650 4 |a Research Support, Non-U.S. Gov't 
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700 1 |a Shin, Hyunjung  |e verfasserin  |4 aut 
700 1 |a Kim, Sanghyo  |e verfasserin  |4 aut 
700 1 |a Cho, Jinhan  |e verfasserin  |4 aut 
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