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231223s2009 xx |||||o 00| ||eng c |
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|a 10.1021/la901919z
|2 doi
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|a pubmed24n0637.xml
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|a (NLM)19715327
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Barnette, Anna L
|e verfasserin
|4 aut
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|a Experimental and density functional theory study of the tribochemical wear behavior of SiO2 in humid and alcohol vapor environments
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|c 2009
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 21.01.2010
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|a Date Revised 10.11.2009
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a This paper investigates the reaction steps involved in tribochemical wear of SiO(2) surfaces in humid ambient conditions and the mechanism of wear prevention due to alcohol adsorption. The friction and wear behaviors of SiO(2) were tested in three distinct gaseous environments at room temperature: dry argon, argon with 50% relative humidity (RH), and argon with n-pentanol vapor pressure 50% relative to the saturation pressure (P/P(sat)). Adsorbed gas molecules have significant chemical influences on the wear of the surface. The SiO(2) surface wears more readily in humid ambient compared to the dry case; however, it does not show any measurable wear in 50% P/P(sat) n-pentanol vapor at the same nominal contact load tested in the dry and humid environments. The tribochemical wear of the SiO(2) surface can be considered the Si-O-Si bond cleavage upon reactions with the impinging vapor molecules under tribological stress. DFT calculations were used to estimate the apparent activation energy needed to cleave the Si-O-Si bond at beta-cristobalite (111) and alpha-quartz (001) surfaces by reactions with impinging water and alcohol vapor molecules. The alkoxide termination of the SiO(2) surfaces increases the energy barrier required to cleave the Si-O-Si bonds when compared to hydroxyl-terminated SiO(2) surfaces
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|a Journal Article
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|a Asay, David B
|e verfasserin
|4 aut
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|a Kim, Don
|e verfasserin
|4 aut
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|a Guyer, Benjamin D
|e verfasserin
|4 aut
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|a Lim, Hanim
|e verfasserin
|4 aut
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|a Janik, Michael J
|e verfasserin
|4 aut
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|a Kim, Seong H
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 25(2009), 22 vom: 17. Nov., Seite 13052-61
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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|g volume:25
|g year:2009
|g number:22
|g day:17
|g month:11
|g pages:13052-61
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|u http://dx.doi.org/10.1021/la901919z
|3 Volltext
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