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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1021/la901981y
|2 doi
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|a pubmed25n0635.xml
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|a (DE-627)NLM190360712
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|a (NLM)19645514
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Cui, Zhaohui
|e verfasserin
|4 aut
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|a In situ crystallized zirconium phenylphosphonate films with crystals vertically to the substrate and their hydrophobic, dielectric, and anticorrosion properties
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|c 2010
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 02.03.2010
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|a Date Revised 21.11.2013
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|a published: Print
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|a Citation Status MEDLINE
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|a The in situ crystallization technique has been utilized to fabricate zirconium phenylphosphonate (ZrPP) films with their hexagonal crystallite perpendicular to the copper substrate. The micro/nano roughness surface structure, as well as the intrinsic hydrophobic characteristic of the surface functional groups, affords ZrPP films excellent hydrophobicity with water contact angle (CA) ranging from 134 degrees to 151 degrees , without any low-surface-energy modification. Particularly, in the corrosive solutions such as acidic or basic solutions over a wide pH from 2 to 12, no obvious fluctuation in CA was observed for all the ZrPP film. The k values of the hydrophobic ZrPP films are in the low-k range (k < 3.0), meeting the development of ultra-large-scale integration (ULSI) circuits. The hydrophobicity feature is proposed to bear ZrPP film a more stable low-k value in an ambient atmosphere. Besides, the polarization current of ZrPP films is reduced by 2 orders of magnitude, compared to that of the untreated copper substrate. Even deposited in a vacuum oven for 30 days at room temperature, ZrPP films also show excellent corrosion resistance, indicating a stable anticorrosion property
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Organometallic Compounds
|2 NLM
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|a Organophosphorus Compounds
|2 NLM
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|a Water
|2 NLM
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|a 059QF0KO0R
|2 NLM
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|a phenylphosphonic acid
|2 NLM
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|a BYD76T2868
|2 NLM
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|a Zirconium
|2 NLM
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|a C6V6S92N3C
|2 NLM
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| 700 |
1 |
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|a Zhang, Fazhi
|e verfasserin
|4 aut
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1 |
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|a Wang, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Sailong
|e verfasserin
|4 aut
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| 700 |
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|a Guo, Xiaoxiao
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1985
|g 26(2010), 1 vom: 05. Jan., Seite 179-82
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnas
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| 773 |
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|g volume:26
|g year:2010
|g number:1
|g day:05
|g month:01
|g pages:179-82
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|u http://dx.doi.org/10.1021/la901981y
|3 Volltext
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