A flexible amorphous Bi(5)Nb(3)O(15) film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature
The amorphous Bi(5)Nb(3)O(15) film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-O(2) film) has a hydrophobic surface with a surface energy of 35.6 mJ m(-2), which is close to that of the orthorhombic pentacene (38 mJ m(-2)), resulting in the formation of a good pentacene...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 25(2009), 20 vom: 20. Okt., Seite 12349-54 |
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| Weitere Verfasser: | , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2009
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Zusammenfassung: | The amorphous Bi(5)Nb(3)O(15) film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-O(2) film) has a hydrophobic surface with a surface energy of 35.6 mJ m(-2), which is close to that of the orthorhombic pentacene (38 mJ m(-2)), resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of 145 nF cm(-2) during and after 10(5) bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the poly(ether sulfone) substrate at room temperature using a BNRT-O(2) film as a gate insulator exhibited a promising device performance with a high field effect mobility of 0.5 cm(2) V(-1) s(-1), an on/off current modulation of 10(5), and a small subthreshold slope of 0.2 V decade(-1) under a low operating voltage of -5 V. This device also maintained a high carrier mobility of 0.45 cm(2) V(-1 )s(-1) during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-O(2) film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT |
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| Beschreibung: | Date Completed 25.01.2010 Date Revised 13.10.2009 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/la9016504 |