Local structure of uncapped and capped InGaN/GaN quantum dots
The local structure around the indium atoms in uncapped and capped In(x)Ga(1-x)N quantum dots has been studied by In K-edge extended X-ray absorption fine structure (EXAFS) spectroscopy. The samples were grown by metal organic vapour phase epitaxy. The EXAFS was successfully applied to study the str...
Ausführliche Beschreibung
Bibliographische Detailangaben
Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 16(2009), Pt 4 vom: 15. Juli, Seite 494-7
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1. Verfasser: |
Piskorska-Hommel, E
(VerfasserIn) |
Weitere Verfasser: |
Schmidt, Th,
Siebert, M,
Yamaguchi, T,
Hommel, D,
Falta, J,
Cross, J O |
Format: | Online-Aufsatz
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Sprache: | English |
Veröffentlicht: |
2009
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Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation
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Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't |