Local structure of uncapped and capped InGaN/GaN quantum dots

The local structure around the indium atoms in uncapped and capped In(x)Ga(1-x)N quantum dots has been studied by In K-edge extended X-ray absorption fine structure (EXAFS) spectroscopy. The samples were grown by metal organic vapour phase epitaxy. The EXAFS was successfully applied to study the str...

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Détails bibliographiques
Publié dans:Journal of synchrotron radiation. - 1994. - 16(2009), Pt 4 vom: 15. Juli, Seite 494-7
Auteur principal: Piskorska-Hommel, E (Auteur)
Autres auteurs: Schmidt, Th, Siebert, M, Yamaguchi, T, Hommel, D, Falta, J, Cross, J O
Format: Article en ligne
Langue:English
Publié: 2009
Accès à la collection:Journal of synchrotron radiation
Sujets:Journal Article Research Support, Non-U.S. Gov't