Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry
We describe a novel and versatile approach for preparing resistive switching memory devices based on binary transition metal oxides (TMOs). Titanium isopropoxide (TIPP) was spin-coated onto platinum (Pt)-coated silicon substrates using a sol-gel process. The sol-gel-derived layer was converted into...
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Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 25(2009), 8 vom: 21. Apr., Seite 4274-8
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| 1. Verfasser: |
Lee, Chanwoo
(VerfasserIn) |
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| Weitere Verfasser: |
Kim, Inpyo,
Choi, Wonsup,
Shin, Hyunjung,
Cho, Jinhan |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2009
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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