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231223s2009 xx |||||o 00| ||eng c |
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|a 10.1021/la803822s
|2 doi
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|a pubmed24n0620.xml
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|a eng
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| 100 |
1 |
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|a Zhang, Liming
|e verfasserin
|4 aut
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|a Phosphorescence enhancement triggered by pi stacking in solid-state [Cu(N-N)(P-P)]BF4 complexes
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|c 2009
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 31.03.2009
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|a Date Revised 21.11.2013
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|a published: Print
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|a Citation Status MEDLINE
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|a In this article, we report a phosphorescence enhancement phenomenon of [Cu(N-N)(P-P)]BF4 complexes in the solid state. The phosphorescence enhancement phenomenon is composed of three features: (1) an obvious emission blue shift, (2) a greatly enhanced photoluminescence quantum yield, and (3) a longer excited-state lifetime. Systematic analyses prove that the main cause of this phenomenon is nonradiative process suppression triggered by the pi stacking between [Cu(N-N)(P-P)]BF4 molecules. The phosphorescence enhancement widely exists in [Cu(N-N)(P-P)]BF4 complexes because of the pi surfaces in their diimine ligands
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Luminescent Agents
|2 NLM
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| 650 |
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|a Organometallic Compounds
|2 NLM
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| 650 |
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|a Copper
|2 NLM
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| 650 |
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|a 789U1901C5
|2 NLM
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| 700 |
1 |
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|a Li, Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Su, Zhongmin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 25(2009), 4 vom: 17. Feb., Seite 2068-74
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|g volume:25
|g year:2009
|g number:4
|g day:17
|g month:02
|g pages:2068-74
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|u http://dx.doi.org/10.1021/la803822s
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