Performance of thin-film ferroelectric capacitors for EMC decoupling

This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was...

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 55(2008), 12 vom: 03. Dez., Seite 2552-8
1. Verfasser: Li, Huadong (VerfasserIn)
Weitere Verfasser: Subramanyam, Guru
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2008
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article Barium Compounds Ferric Compounds Oxides barium titanate(IV) 12047-27-7 Titanium D1JT611TNE strontium titanium oxide OLH4I98373 mehr... Strontium YZS2RPE8LE
Beschreibung
Zusammenfassung:This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was extracted from the experimental results, and a considerable series resistance was found to exist in ferroelectric capacitors. This resistance gives rise to the observed performance difference around series resonance between ferroelectric PZT capacitors and normal capacitors. Measurements on paraelectric (Ba,Sr)TiO(3)-based integrated varactors do not show this significant resistance. Some analyses were made to investigate the mechanisms, and it was found that it can be due to the hysteresis in the ferroelectric thin films
Beschreibung:Date Completed 07.08.2009
Date Revised 16.11.2017
published: Print
Citation Status MEDLINE
ISSN:1525-8955
DOI:10.1109/TUFFC.2008.971