Influence of surface hydroxylation on 3-aminopropyltriethoxysilane growth mode during chemical functionalization of GaN Surfaces : an angle-resolved X-ray photoelectron spectroscopy Study

A comparative study of the chemical functionalization of undoped, n- and p-type GaN layers grown on sapphire substrates by metal-organic chemical vapor deposition was carried out. Both types of samples were chemically functionalized with 3-aminopropyltriethoxysilane (APTES) using a well-established...

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Veröffentlicht in:	Langmuir : the ACS journal of surfaces and colloids. - 1992. - 24(2008), 16 vom: 19. Aug., Seite 8667-71
1. Verfasser:	Arranz, A (VerfasserIn)
Weitere Verfasser:	Palacio, C, García-Fresnadillo, D, Orellana, G, Navarro, A, Muñoz, E
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2008
Zugriff auf das übergeordnete Werk:	Langmuir : the ACS journal of surfaces and colloids
Schlagworte:	Journal Article Research Support, Non-U.S. Gov't Propylamines Silanes gallium nitride 1R9CC3P9VL Gallium CH46OC8YV4 amino-propyl-triethoxysilane L8S6UBW552