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231223s2008 xx |||||o 00| ||eng c |
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|a 10.1021/la800716r
|2 doi
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|a pubmed24n0600.xml
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|a (DE-627)NLM17997467X
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|a (NLM)18522438
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Ito, Takashi
|e verfasserin
|4 aut
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| 245 |
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|a Self-assembled monolayers of alkylphosphonic acid on GaN substrates
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|c 2008
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 15.08.2008
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|a Date Revised 25.06.2008
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a In this paper we describe the formation and characterization of self-assembled monolayers of octadecylphosphonic acid (ODPA) on epitaxial (0001) GaN films on sapphire. By immersing the substrate in its toluene solution, ODPA strongly adsorbed onto UV/O 3-treated GaN to give a hydrophobic surface. Spectroscopic ellipsometry verified the formation of a well-packed monolayer of ODPA on the GaN substrate. In contrast, adsorption of other primarily substituted hydrocarbons (C n H 2 n+1 X; n = 16-18; X = -COOH, -NH 2, -SH, and -OH) offered less hydrophobic surfaces, reflecting their weaker interaction with the GaN substrate surfaces. A UV/O 3-treated N-polar GaN had a high affinity to the -COOH group in addition to ODPA, possibly reflecting the basic properties of the surface. These observations suggested that the molecular adsorption was primarily based on hydrogen bond interactions between the surface oxide layer on the GaN substrate and the polar functional groups of the molecules. The as-prepared ODPA monolayers were desorbed from the GaN substrates by soaking in an aqueous solution, particularly in a basic solution. However, ODPA monolayers heated at 160 degrees C exhibited suppressed desorption in acidic and neutral aqueous solution maybe due to covalent bond formation between ODPA and the surface. X-ray photoelectron spectroscopy provided insight into the effect of the UV/O 3 treatment on the surface composition of the GaN substrate and also the ODPA monolayer formation. These results demonstrate that the surface of a GaN substrate can be tailored with organic molecules having an alkylphosphonic acid moiety for future sensor and device applications
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|a Journal Article
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|a Forman, Sarah M
|e verfasserin
|4 aut
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|a Cao, Chundi
|e verfasserin
|4 aut
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|a Li, Feng
|e verfasserin
|4 aut
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|a Eddy, Charles R
|c Jr
|e verfasserin
|4 aut
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|a Mastro, Michael A
|e verfasserin
|4 aut
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|a Holm, Ronald T
|e verfasserin
|4 aut
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|a Henry, Richard L
|e verfasserin
|4 aut
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| 700 |
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|a Hohn, Keith L
|e verfasserin
|4 aut
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| 700 |
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|a Edgar, J H
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 24(2008), 13 vom: 01. Juni, Seite 6630-5
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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|g volume:24
|g year:2008
|g number:13
|g day:01
|g month:06
|g pages:6630-5
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|u http://dx.doi.org/10.1021/la800716r
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