Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions

Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions

A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4aq with Sns in the presence of CTACaq (cetyltrimethylammonium chloride) and NaNO3aq, which were important to the product morphology development. The nanowire di...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 24(2008), 11 vom: 03. Juni, Seite 5647-9
1. Verfasser: Huang, Ting-Kai (VerfasserIn)
Weitere Verfasser: Chen, Ying-Chieh, Ko, Hsin-Chun, Huang, Hsin-Wei, Wang, Chia-Hsin, Lin, Huang-Kai, Chen, Fu-Rong, Kai, Ji-Jung, Lee, Chi-Young, Chiu, Hsin-Tien
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2008
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl4aq with Sns in the presence of CTACaq (cetyltrimethylammonium chloride) and NaNO3aq, which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 microm
Beschreibung:Date Completed 22.07.2008
Date Revised 27.05.2008
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1520-5827
DOI:10.1021/la8000575