Cooled, ultrahigh Q, sapphire dielectric resonators for low-noise, microwave signal generation

Ultra-high Q, X-band resonators, used in a frequency discriminator for stabilization of a low-noise signal generator, can provide a means of obtaining significant reduction in phase noise levels. Resonator unloaded Qs on the order of 500 K can be obtained in sapphire dielectric resonator (DR) operat...

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Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 39(1992), 3 vom: 28., Seite 405-11
1. Verfasser: Driscoll, M M (VerfasserIn)
Weitere Verfasser: Haynes, J T, Jelen, R A, Weinert, R W, Gavaler, J R, Talvacchio, J, Wagner, G R, Zaki, K A, Liang, X P
Format: Aufsatz
Sprache:English
Veröffentlicht: 1992
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article
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245 1 0 |a Cooled, ultrahigh Q, sapphire dielectric resonators for low-noise, microwave signal generation 
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520 |a Ultra-high Q, X-band resonators, used in a frequency discriminator for stabilization of a low-noise signal generator, can provide a means of obtaining significant reduction in phase noise levels. Resonator unloaded Qs on the order of 500 K can be obtained in sapphire dielectric resonator (DR) operating on a low-order (i.e. TE(01)) mode at 77 K and employing high-temperature superconducting (HTS) films installed in the DR enclosure covers. Rigorous analysis for the determination of resonator frequency, modes, and unloaded Q have been carried out using mode matching techniques. Trade-off studies have been performed to select resonator dimensions for the optimum mode yielding highest unloaded Q and widest spurious mode separation. Field distributions within the resonator have been computed to enable practical excitation of the required mode. The results of both analysis and prototype device evaluation experiments are compared for resonators fabricated using enclosures consisting of conventional, metal sidewalls and covers employing HTS films as a function of cover conductivity 
650 4 |a Journal Article 
700 1 |a Haynes, J T  |e verfasserin  |4 aut 
700 1 |a Jelen, R A  |e verfasserin  |4 aut 
700 1 |a Weinert, R W  |e verfasserin  |4 aut 
700 1 |a Gavaler, J R  |e verfasserin  |4 aut 
700 1 |a Talvacchio, J  |e verfasserin  |4 aut 
700 1 |a Wagner, G R  |e verfasserin  |4 aut 
700 1 |a Zaki, K A  |e verfasserin  |4 aut 
700 1 |a Liang, X P  |e verfasserin  |4 aut 
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