Effect of deep-trap level on transverse acoustoelectric voltage measurements
The effect of trapped charges on the transverse acoustoelectric voltage (TAV) is investigated with the aim of extending the use of TAV measurements to the study of semiconductors with high defect density. Even if surface acoustic wave frequencies are as high as 100 MHz, charge trapping can influence...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 38(1991), 5 vom: 28., Seite 503-9 |
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| Weitere Verfasser: | , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
1991
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Journal Article |