Switching transient analysis of a metal/ferroelectric/semiconductor switch diode with high speed response to infrared light
A thin PbTiO(3)-n-p(+) silicon switch diode has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The diode has a rapid response time of 0.65 mus compared with other conventional infrared sensors. It is attributed to the rapid s...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 46(1999), 3 vom: 28., Seite 502-10
|
|---|
| 1. Verfasser: |
Chen, F Y
(VerfasserIn) |
|---|
| Weitere Verfasser: |
Ho, J J,
Fang, Y K,
Shu, C Y,
Hsu, C Y,
Chen, J R,
Ju, M S |
|---|
| Format: | Online-Aufsatz
|
|---|
| Sprache: | English |
|---|
| Veröffentlicht: |
1999
|
|---|
| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|
|---|
| Schlagworte: | Journal Article |
|---|