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231223s1999 xx |||||o 00| ||eng c |
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|a 10.1109/58.741522
|2 doi
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|a pubmed24n0591.xml
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|a eng
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|a Rotter, M
|e verfasserin
|4 aut
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|a Voltage controlled SAW velocity in GaAs/LiNbO(3)-hybrids
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|c 1999
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 16.12.2009
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|a Date Revised 01.02.2008
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a The combination of the electronic properties of semiconductor heterojunctions and the acoustic properties of piezoelectric materials yields very promising surface acoustic wave (SAW) hybrid systems. Quasi-monolithical integration of thin GaAs/InGaAs/AlGaAs-quantum well structures on LiNbO(3) SAW devices is achieved using the epitaxial lift-off (ELO) technique. The conductivity of the two-dimensional electron system in the quantum well, which can be controlled via field effect, modifies the velocity of the SAW. Due to the high electromechanical coupling coefficient of LiNbO(3) a large phase shift can be obtained. As an example for this new class of voltage-tunable single chip SAW devices, a voltage-controlled oscillator (VCO) is presented in which the output frequency can be tuned by an applied gate voltage
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|a Journal Article
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|a Ruile, W
|e verfasserin
|4 aut
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1 |
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|a Wixforth, A
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kotthaus, J P
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 46(1999), 1 vom: 28., Seite 120-5
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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|g volume:46
|g year:1999
|g number:1
|g day:28
|g pages:120-5
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|u http://dx.doi.org/10.1109/58.741522
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