Deposition of tetracene on GaSe passivated Si(111)
The growth of tetracene on GaSe half-sheet passivated Si(111) is investigated under ultrahigh vacuum (UHV) using low-energy electron diffraction (LEED) and photoelectron spectroscopy (PS). A highly ordered thin-film growth was observed in the initial stages of the deposition process. All proposed st...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 23(2007), 9 vom: 24. Apr., Seite 4856-61 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2007
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |