Deposition of tetracene on GaSe passivated Si(111)
The growth of tetracene on GaSe half-sheet passivated Si(111) is investigated under ultrahigh vacuum (UHV) using low-energy electron diffraction (LEED) and photoelectron spectroscopy (PS). A highly ordered thin-film growth was observed in the initial stages of the deposition process. All proposed st...
| Publié dans: | Langmuir : the ACS journal of surfaces and colloids. - 1985. - 23(2007), 9 vom: 24. Apr., Seite 4856-61 |
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| Auteur principal: | |
| Autres auteurs: | , , , |
| Format: | Article |
| Langue: | English |
| Publié: |
2007
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| Accès à la collection: | Langmuir : the ACS journal of surfaces and colloids |
| Sujets: | Journal Article |