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|a pubmed24n0564.xml
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|a (DE-627)NLM169103765
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|a (NLM)17373837
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Nishiyama, Norikazu
|e verfasserin
|4 aut
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|a Vapor-phase synthesis of mesoporous SiO2-P2O5 thin films
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|c 2007
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 12.06.2007
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|a Date Revised 19.11.2015
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Mesoporous SiO2-P2O5 films were synthesized from the vapor phase onto a silicon substrate. First, a precursor solution of cetyltrimethylammonium bromide (C16TAB), H3PO4, ethanol, and water was deposited on a silicon substrate by a spin-coating method. Then, the C16TAB-H3PO4 composite film was treated with tetraethoxysilane (TEOS) vapor at 90-180 degrees C for 2.5 h. The H3PO4-C16TAB composite formed a hexagonal structure on the silicon substrate before vapor treatment. The TEOS molecules penetrated into the film without a phase transition. The periodic mesostructure of the SiO2-P2O5 films was retained after calcination. The calcined films showed a high proton conductivity of about 0.55 S/cm at room temperature. The molar ratio of P/Si in the SiO2-P2O5 film was as high as 0.43, a level that was not attained by a premixing sol-gel method. The high phosphate group content and the ordered periodic mesostructure contributed to the high proton conductivity
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|a Journal Article
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|a Membranes, Artificial
|2 NLM
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|a Phosphorus Compounds
|2 NLM
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|a phosphorus pentoxide
|2 NLM
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|a 51SWB7223J
|2 NLM
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|a Silicon Dioxide
|2 NLM
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|a 7631-86-9
|2 NLM
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|a Silicon
|2 NLM
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|a Z4152N8IUI
|2 NLM
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|a Kaihara, Junji
|e verfasserin
|4 aut
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|a Nishiyama, Yuko
|e verfasserin
|4 aut
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|a Egashira, Yasuyuki
|e verfasserin
|4 aut
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|a Ueyama, Korekazu
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 23(2007), 9 vom: 24. Apr., Seite 4746-8
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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|g volume:23
|g year:2007
|g number:9
|g day:24
|g month:04
|g pages:4746-8
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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|a AR
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|d 23
|j 2007
|e 9
|b 24
|c 04
|h 4746-8
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