Direct precursor conversion reaction for densely packed Ag2S nanocrystal thin films

Successful realization of highly crystalline and densely packed Ag2S nanocrystal (NC) films has been achieved by directly converting precursor molecules, Ag(SCOPh), on preheated substrates. When an aliquot of Ag(SCOPh) solution dissolved in trioctylphosphine (TOP) is applied on preheated solid subst...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 23(2007), 5 vom: 27. Feb., Seite 2800-4
1. Verfasser: Tang, Qun (VerfasserIn)
Weitere Verfasser: Song, Hyun Jae, Byon, Hye Ryung, Yang, Hyun Jin, Choi, Hee Cheul
Format: Aufsatz
Sprache:English
Veröffentlicht: 2007
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:Successful realization of highly crystalline and densely packed Ag2S nanocrystal (NC) films has been achieved by directly converting precursor molecules, Ag(SCOPh), on preheated substrates. When an aliquot of Ag(SCOPh) solution dissolved in trioctylphosphine (TOP) is applied on preheated solid substrates at 160 degrees C, such as SiO2/Si, H-terminated Si, and quartz. Ag2S NC thin films have been formed with instant phase and color changes of the precursor solutions from pale yellow homogeneous solution to black solid films. The average diameter of individual Ag2S NCs forming thin films is ca. 25 nm, as confirmed by examining both isolated Ag2S NCs from thin films and as-made thin film samples by using transmission electron microscopy (TEM) and scanning electron microscopy (SEM), respectively. Powder X-ray diffraction (XRD) pattern shows that the synthesized Ag2S NCs have well-defined monoclinic acanthite phase. Direct precursor conversion process has resulted in densely packed Ag2S NCs with reduced interparticle distances owing to efficient removal of TOP during the reaction. Compared to the devices fabricated by the drop-coating process, Ag2S thin film devices fabricated by direct precursor conversion process have shown a ca. 300-fold increased conductance. Such Ag2S NC devices have also displayed reliable photoresponses upon white light illumination with high photosensitivity (S approximately equal to 1)
Beschreibung:Date Completed 27.06.2007
Date Revised 20.02.2007
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1520-5827