Piezoelectric thin films : evaluation of electrical and electromechanical characteristics for MEMS devices
We present a new measurement method to characterize piezoelectric thin films utilizing a four-point bending setup. In combination with a single- or a double-beam laser interferometer, this setup allows the determination of the effective transverse and longitudinal piezoelectric coefficients e31,f an...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 54(2007), 1 vom: 16. Jan., Seite 8-14 |
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| Weitere Verfasser: | , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2007
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Journal Article Research Support, Non-U.S. Gov't Membranes, Artificial |
| Zusammenfassung: | We present a new measurement method to characterize piezoelectric thin films utilizing a four-point bending setup. In combination with a single- or a double-beam laser interferometer, this setup allows the determination of the effective transverse and longitudinal piezoelectric coefficients e31,f and d33,f, respectively. Additionally, the dielectric coefficient and the large signal electrical polarization are measured to add further important characteristics of the film. These data are essential for piezoelectric thin film process specification and the design and qualification of microelectromechanical systems devices |
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| Beschreibung: | Date Completed 07.02.2007 Date Revised 17.09.2019 published: Print Citation Status MEDLINE |
| ISSN: | 1525-8955 |