Nanopatterning and fabrication of memory devices from layer-by-layer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) ultrathin films

A write-read-erasable memory device was fabricated on layer-by-layer (LbL) ultrathin films prepared from poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT-PSS) and poly(diallyldimethylammonium chloride) (PDDA). By use of current-sensing atomic force microscopy (CS-AFM), nanopatterns we...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 23(2007), 2 vom: 16. Jan., Seite 817-25
1. Verfasser: Jiang, Guoqian (VerfasserIn)
Weitere Verfasser: Baba, Akira, Advincula, Rigoberto
Format: Aufsatz
Sprache:English
Veröffentlicht: 2007
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:A write-read-erasable memory device was fabricated on layer-by-layer (LbL) ultrathin films prepared from poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT-PSS) and poly(diallyldimethylammonium chloride) (PDDA). By use of current-sensing atomic force microscopy (CS-AFM), nanopatterns were formed by applying a bias voltage between a conductive tip (Pt-coated Si3N4 cantilever) in contact with the polymer film and gold substrate. The dependence of the nanopatterns on film thickness, applied bias, and writing speed was studied. Moreover, the height of the patterns was 3-5 times higher than the original thickness of the films, opening the possibility for three-dimensional nanopatterning. The ability of the patterns to be erased after nanowriting was also investigated. By comparing the I-V characteristics under ambient conditions and under N2 environment, a joule-heating activated, water meniscus-assisted anion doping mechanism for the nanopatterning process was determined. Write-read-erase memory device capability was demonstrated on the nanopatterns
Beschreibung:Date Completed 17.07.2007
Date Revised 09.01.2007
published: Print
Citation Status PubMed-not-MEDLINE
ISSN:1520-5827