First-principles analyses and predictions on the reactivity of barrier layers of Ta and TaN toward organometallic precursors for deposition of copper films

First-principles analyses and predictions on the reactivity of barrier layers of Ta and TaN toward organometallic precursors for deposition of copper films

We present theoretical studies based on first-principles density functional theory calculations on the mechanisms of chemical vapor deposition of Cu-hexafluoracetylacetonato-trimethylvinylsilane (Cu(hfac)(tmvs)) on tantalum surfaces. This process has been used in the past to grow copper films via a...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 21(2005), 16 vom: 02. Aug., Seite 7608-14
1. Verfasser: Machado, Eduardo (VerfasserIn)
Weitere Verfasser: Kaczmarski, Marcin, Ordejón, Pablo, Garg, Diwakar, Norman, John, Cheng, Hansong
Format: Aufsatz
Sprache:English
Veröffentlicht: 2005
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article