Depth distribution of irradiation-induced cross-linking in aromatic self-assembled monolayers

Pristine and strongly irradiated self-assembled monolayers of [1,1':4',1' '-terphenyl]-4,4' '-dimethanethiol (TPDMT) on Au have been characterized by near-edge X-ray absorption fine structure spectroscopy using partial electron yield acquisition mode. The TPDMT films we...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 20(2004), 17 vom: 17. Aug., Seite 7166-70
1. Verfasser: Tai, Y (VerfasserIn)
Weitere Verfasser: Shaporenko, A, Eck, W, Grunze, M, Zharnikov, M
Format: Aufsatz
Sprache:English
Veröffentlicht: 2004
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't (1,1'-4',1''-terphenyl)-4,4''-dimethanethiol Cross-Linking Reagents Hydrocarbons, Aromatic Membranes, Artificial Sulfhydryl Compounds Terphenyl Compounds Gold 7440-57-5
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520 |a Pristine and strongly irradiated self-assembled monolayers of [1,1':4',1' '-terphenyl]-4,4' '-dimethanethiol (TPDMT) on Au have been characterized by near-edge X-ray absorption fine structure spectroscopy using partial electron yield acquisition mode. The TPDMT films were found to be extremely stable toward electron irradiation, which is explained by cross-linking between the aromatic backbones. In addition, we assume that a large delocalization and a strong relaxation of the initial electronic excitations in the densely packed film contributed to the film stability. The data analysis implies an inhomogeneous distribution of the irradiation-induced dehydrogenation and cross-linking of the terphenyl moieties in the TPDMT film, being most pronounced close to the film-ambient interface. The inhomogeneity was explained by quenching of the electronically excited C-H states via dipole-dipole interaction with the states' image at the metal surface, which has a reduced probability with increasing separation from the metal surface. Generally, the results suggest the importance of relaxation processes for the response of self-assembled monolayers to ionizing radiation 
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650 4 |a Research Support, Non-U.S. Gov't 
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650 7 |a Membranes, Artificial  |2 NLM 
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700 1 |a Shaporenko, A  |e verfasserin  |4 aut 
700 1 |a Eck, W  |e verfasserin  |4 aut 
700 1 |a Grunze, M  |e verfasserin  |4 aut 
700 1 |a Zharnikov, M  |e verfasserin  |4 aut 
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