Synchrotron-radiation-induced formation of salt particles on an X-ray lithography mask
The suppression and removal of contaminants on X-ray masks are required for the application of X-ray lithography to practical semiconductor production, because contamination is easily transferred to the replicated resist patterns and degrades the LSI patterns. In order to study contamination of a Ta...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 5(1998), Pt 3 vom: 01. Mai, Seite 1141-3 |
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| Weitere Verfasser: | , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
1998
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |