Trace element analysis on Si wafer surfaces by TXRF at the ID32 ESRF undulator beamline
Synchrotron radiation total-reflection X-ray fluorescence (SR-TXRF) has been applied to the impurity analysis of Si wafers using a third-generation synchrotron radiation undulator source. A lower limit of detectability (LLD) for Ni atoms of 17 fg (1.7 x 10(8) atoms cm(-2)) has been achieved with an...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 5(1998), Pt 3 vom: 01. Mai, Seite 1064-6 |
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| Weitere Verfasser: | , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
1998
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |
| Zusammenfassung: | Synchrotron radiation total-reflection X-ray fluorescence (SR-TXRF) has been applied to the impurity analysis of Si wafers using a third-generation synchrotron radiation undulator source. A lower limit of detectability (LLD) for Ni atoms of 17 fg (1.7 x 10(8) atoms cm(-2)) has been achieved with an optical set-up based on an Si(111) double-crystal monochromator and a horizontal sample geometry. These first results are very promising for synchrotron radiation trace element analysis since we estimate that it is possible to lower the LLD by a factor of about 25 by employing appropriate optics and detectors. The use of a crystal monochromator opens new possibilities to perform absorption and scattering experiments (NEXAFS and X-ray standing-wave methods) for chemical and structural analysis of ultratrace elements |
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| Beschreibung: | Date Completed 02.10.2012 Date Revised 20.07.2004 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1600-5775 |