An ultrahigh-vacuum goniometer for in situ soft X-ray standing-wave analysis of semiconductor surfaces
An ultrahigh-vacuum goniometer was developed for in situ X-ray standing-wave (XSW) analysis of semiconductor surfaces prepared by molecular-beam epitaxy (MBE). Although two ultrahigh-vacuum motors for chi and phi rotating axes are inside the analysis chamber, low-energy photoelectrons can still be c...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 5(1998), Pt 3 vom: 01. Mai, Seite 1029-31 |
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| Format: | Aufsatz |
| Sprache: | English |
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1998
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |