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231223s2004 xx ||||| 00| ||eng c |
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|a eng
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|a Fellah, Samira
|e verfasserin
|4 aut
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|a Hidden electrochemistry in the thermal grafting of silicon surfaces from grignard reagents
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|c 2004
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 07.06.2006
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|a Date Revised 13.07.2004
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright 2004 American Chemical Society
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|a Covalent grafting of alkyl chains on silicon can be obtained by thermal treatment in Grignard reagents. Alkyl halide present in the Grignard solution as an impurity appears to play a key role in the grafting process. Grafting efficiency is improved when the alkyl halide concentration is increased. It is also enhanced on n-type substrates as compared to p-type substrates and when alkyl bromides are present in solution rather than alkyl chlorides. The grafting reaction involves a zero-current electrochemical step. A reaction model in which simultaneous Grignard oxidation and alkyl halide reduction take place at the silicon surface accounts for all these observations. Alkyl halide reduction is the rate-determining step. Negative charging of the silicon surface lowers the energetic barrier for this reaction, allowing for efficient grafting on n-Si
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|a Journal Article
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|a Boukherroub, Rabah
|e verfasserin
|4 aut
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|a Ozanam, François
|e verfasserin
|4 aut
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|a Chazalviel, Jean-Noël
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1991
|g 20(2004), 15 vom: 20. Juli, Seite 6359-64
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|x 0743-7463
|7 nnns
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|g volume:20
|g year:2004
|g number:15
|g day:20
|g month:07
|g pages:6359-64
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