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231223s2004 xx ||||| 00| ||eng c |
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|a pubmed25n0490.xml
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|a (DE-627)NLM146964616
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|a (NLM)14995014
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Cibiel, Gilles
|e verfasserin
|4 aut
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| 245 |
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|a Optimization of an ultra low-phase noise sapphire--SiGe HBT oscillator using nonlinear CAD
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|c 2004
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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| 338 |
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 28.04.2004
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|a Date Revised 17.09.2019
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a In this paper, the electrical and noise performances of a 0.8 microm silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded QL factor of 75,000
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|a Journal Article
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|a Régis, Myrianne
|e verfasserin
|4 aut
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|a Llopis, Olivier
|e verfasserin
|4 aut
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|a Rennane, Abdelali
|e verfasserin
|4 aut
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| 700 |
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|a Bary, Laurent
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Plana, Robert
|e verfasserin
|4 aut
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1 |
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|a Kersalé, Yann
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Giordano, Vincent
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1999
|g 51(2004), 1 vom: 14. Jan., Seite 33-41
|w (DE-627)NLM098181017
|x 0885-3010
|7 nnns
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| 773 |
1 |
8 |
|g volume:51
|g year:2004
|g number:1
|g day:14
|g month:01
|g pages:33-41
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|a GBV_ILN_350
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|a AR
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|d 51
|j 2004
|e 1
|b 14
|c 01
|h 33-41
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