A comparison of neutron-induced SEU rates in Si and GaAs devices
The single-event-upset rates due to neutron-induced nuclear recoils have been calculated for Si and GaAs components using the HETC and MCNP codes and the ENDF data base for (n, p) and (n, alpha) reactions. For the same critical charge and sensitive volume, the upset rate in Si exceeds that of GaAs...
| Veröffentlicht in: | IEEE transactions on nuclear science. - 1988. - 35(1988), 6 vom: 27. Dez., Seite 1634-7 |
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| Format: | Aufsatz |
| Sprache: | English |
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1988
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on nuclear science |
| Schlagworte: | Comparative Study Journal Article NASA Discipline Number 22-70 NASA Discipline Radiation Health NASA Program Biomedical Research Non-NASA Center Gallium CH46OC8YV4 Arsenic N712M78A8G mehr... |