Study by X-ray absorption spectroscopy of Si3N4 films after Cu or Fe implantation and thermal treatment
Si3N4 amorphous thin layers prepared by sputtering have been implanted either with Cu or with Fe ions. X-ray absorption spectroscopy was performed at the Si K edge to characterise the electronic empty states of p character, the structural state of the initial layers and the modifications around Si i...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1999. - 8(2001), Pt 2 vom: 01. März, Seite 499-501 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2001
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |