Verification of a distortion in the microstructure of GaN detected by EXAFS using ab initio density functional theory calculations
X-ray absorption fine structure (XAFS) measurements on a series of epitaxially grown GaN samples have shown a distortion in the microstructure of GaN. More specifically the central N atom is 4-fold coordinated but the four Ga atoms are not equidistant. It has been shown that 2.9 to 3.5 of them (depe...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1999. - 8(2001), Pt 2 vom: 01. März, Seite 258-60 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2001
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |