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|a Self-consistent determination of the band offsets in InAsxP1-x/InP strained-layer quantum wells and the bowing parameter of bulk InAsxP1-x
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|c 1996
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|a Text
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|a ohne Hilfsmittel zu benutzen
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|a Date Revised 20.11.2019
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|i Enthalten in
|t Physical review. B, Condensed matter
|d 1985
|g 53(1996), 4 vom: 15. Jan., Seite 1990-1996
|w (DE-627)NLM098137042
|x 0163-1829
|7 nnns
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|g volume:53
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|d 53
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|h 1990-1996
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