Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

von Chen, Junting
Veröffentlicht in: Advanced materials (Deerfield Beach, Fla.) (2023)

Strain Release in GaN Epitaxy on 4° Off-Axis 4H-SiC

von Feng, Sirui
Veröffentlicht in: Advanced materials (Deerfield Beach, Fla.) (2022)

In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration A First-Principles Study

von Qian, Qingkai
Veröffentlicht in: Langmuir : the ACS journal of surfaces and colloids (2018)