Tailoring Altermagnetic Spin Splitting via Strain-Induced Symmetry Reconstruction in CrSb Thin Films

Tailoring Altermagnetic Spin Splitting via Strain-Induced Symmetry Reconstruction in CrSb Thin Films

© 2025 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 23. Okt., Seite e15712
1. Verfasser: Lin, Wenting (VerfasserIn)
Weitere Verfasser: Shen, Zhen-Xiong, Zhang, Xiaoqian, Li, Chao-Kai, Ren, Quan, Wang, Shuo, Li, Huayao, Han, Lulu, Lu, Xuezeng, Niu, Wei, Zhang, Si, Song, Shixin, Zeng, Meng, Liu, Yi, Sun, Zhe, Liu, Zhengtai, Ye, Mao, Qiao, Shan, Bian, Guang, Liu, Chang, Xu, Yongbing, He, Lixin, Miao, Lin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2025
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article epitaxial altermagnetic films magnetic reconstruction spin polarization symmetry manipulation
LEADER 01000naa a22002652c 4500
001 NLM394462637
003 DE-627
005 20251023233454.0
007 cr uuu---uuuuu
008 251023s2025 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202515712  |2 doi 
028 5 2 |a pubmed25n1608.xml 
035 |a (DE-627)NLM394462637 
035 |a (NLM)41128281 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Lin, Wenting  |e verfasserin  |4 aut 
245 1 0 |a Tailoring Altermagnetic Spin Splitting via Strain-Induced Symmetry Reconstruction in CrSb Thin Films 
264 1 |c 2025 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 23.10.2025 
500 |a published: Print-Electronic 
500 |a Citation Status Publisher 
520 |a © 2025 Wiley‐VCH GmbH. 
520 |a Altermagnets represent a novel class of quantum magnets that emerge from specific crystal symmetry operations, particularly rotations or mirror reflections, exhibiting unique momentum-dependent spin-split band structures within the antiferromagnetic regime. The spin textures of altermagnets are fundamentally governed by spin group symmetry, offering unique opportunities for magnetic property control. However, experimentally tuning their spin-splitting via symmetry engineering remains a key challenge. Here, interfacial strain in 10 nm CrSb thin films by molecular beam epitaxy (MBE) is engineered to systematically modify its crystal symmetry. Remarkably, high-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) measurements revealed a transition to a spin-degenerate ground state throughout the entire Brillouin zone, quantitatively demonstrating strain control over altermagnetic spin splitting. Although bulk altermagnetic theory anticipates spin-splitting, thin films exhibit spin degeneracy instead, which this first-principles calculations trace to interfacial strain-mediated surface magnetic state stabilization. In CrSb thin films, strain-induced magnetic reconstruction preserves PT symmetry (spatial inversion followed by time reversal), thereby enforces spin degeneracy across the Brillouin zone, as evidenced by the quantitative agreement between calculated spin/electronic structures and spin-ARPES measurements. This strategy establishes a new paradigm for tailoring altermagnetic spin splitting through engineered symmetry, addressing a critical gap in spectroscopic investigations of altermagnetic systems 
650 4 |a Journal Article 
650 4 |a epitaxial altermagnetic films 
650 4 |a magnetic reconstruction 
650 4 |a spin polarization 
650 4 |a symmetry manipulation 
700 1 |a Shen, Zhen-Xiong  |e verfasserin  |4 aut 
700 1 |a Zhang, Xiaoqian  |e verfasserin  |4 aut 
700 1 |a Li, Chao-Kai  |e verfasserin  |4 aut 
700 1 |a Ren, Quan  |e verfasserin  |4 aut 
700 1 |a Wang, Shuo  |e verfasserin  |4 aut 
700 1 |a Li, Huayao  |e verfasserin  |4 aut 
700 1 |a Han, Lulu  |e verfasserin  |4 aut 
700 1 |a Lu, Xuezeng  |e verfasserin  |4 aut 
700 1 |a Niu, Wei  |e verfasserin  |4 aut 
700 1 |a Zhang, Si  |e verfasserin  |4 aut 
700 1 |a Song, Shixin  |e verfasserin  |4 aut 
700 1 |a Zeng, Meng  |e verfasserin  |4 aut 
700 1 |a Liu, Yi  |e verfasserin  |4 aut 
700 1 |a Sun, Zhe  |e verfasserin  |4 aut 
700 1 |a Liu, Zhengtai  |e verfasserin  |4 aut 
700 1 |a Ye, Mao  |e verfasserin  |4 aut 
700 1 |a Qiao, Shan  |e verfasserin  |4 aut 
700 1 |a Bian, Guang  |e verfasserin  |4 aut 
700 1 |a Liu, Chang  |e verfasserin  |4 aut 
700 1 |a Xu, Yongbing  |e verfasserin  |4 aut 
700 1 |a He, Lixin  |e verfasserin  |4 aut 
700 1 |a Miao, Lin  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g (2025) vom: 23. Okt., Seite e15712  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g year:2025  |g day:23  |g month:10  |g pages:e15712 
856 4 0 |u http://dx.doi.org/10.1002/adma.202515712  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |j 2025  |b 23  |c 10  |h e15712