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|a 10.1002/adma.202503562
|2 doi
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|a pubmed25n1602.xml
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|a (DE-627)NLM390072834
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|a (NLM)40708363
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|a DE-627
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|a eng
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| 100 |
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|a Qu, Shangqing
|e verfasserin
|4 aut
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| 245 |
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|a Dual Optimization of Electrolyte and Interface in Na-β″-Al2O3 via Ga3+ Doping for Advanced Solid-State Sodium Batteries
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|c 2025
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 17.10.2025
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2025 Wiley‐VCH GmbH.
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|a Na-β″-Al2O3 is a highly promising solid-state electrolyte (SSE) for solid-state sodium batteries (SSSBs) with a wide electrochemical stability window and excellent stability against metallic sodium. However, its practical application is hindered by the instability of β″ phase (R 3 ¯ $\bar 3$ m) during sintering, low polycrystalline ionic conductivity at room temperature, and poor interfacial contact with sodium anodes. In this study, a stablized SSSB is obtained via doping Ga3+ into Na1.67Mg0.67Al10.33O17 (NMAO), which also suppresses the formation of the β' phase (P63/mmc) and decreases stacking faults. After sintering at 1550 °C for 2 h, Na1.67Mg0.67Al9.33GaO17 (NMA9.33GO) exhibits an ionic conductivity of 9.2 × 10-4 S cm-1 at 30 °C, ≈1.7 times greater than NMAO. Furthermore, Ga3+ doping enhances the wettability with sodium, achieving superior contact stability and the formation of Na-Ga alloys at the interface significantly improves electrode-electrolyte contact stability, achieving a high critical current density (CCD) of 0.8 mA cm-2 and a low interfacial impedance of 16 Ω cm2. A quasi-solid-state battery assembled with Na3V2(PO4)3 (NVP) as the cathode demonstrates excellent cycling stability and rate performance, retaining a high discharge capacity of 91 mAh g-1 at 5 C, and maintaining 87% capacity retention after 1000 cycles at 1 C. This work provides new insights into improving electrolyte performance and interfacial engineering through doping strategies, thereby promoting the development of efficient and long-term SSSBs
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|a Journal Article
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|a Na‐β″‐Al2O3
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|a alloy interfaces
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| 650 |
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|a gallium ion doping
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| 650 |
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|a solid‐state electrolytes
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| 650 |
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4 |
|a stacking faults
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| 700 |
1 |
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|a Niu, Tianhao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qiao, Xianji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shen, Yanran
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cai, Guohong
|e verfasserin
|4 aut
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1 |
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|a Wang, Xiaoge
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yonggang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Zhipeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Shipeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Zeyue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Guobao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cai, Guanqun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Junliang
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 37(2025), 41 vom: 17. Okt., Seite e03562
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:37
|g year:2025
|g number:41
|g day:17
|g month:10
|g pages:e03562
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202503562
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 37
|j 2025
|e 41
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|c 10
|h e03562
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