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240924s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202411968
|2 doi
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|a pubmed25n1259.xml
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|a (DE-627)NLM378009168
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|a (NLM)39313989
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Cai, Yuanjing
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Multi-Functional Silole Hole Transport Layer for Efficient and Stable Lead-Tin Perovskite and Tandem Solar Cells
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 16.11.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Despite high theoretical efficiencies and rapid improvements in performance, high-efficiency ≈1.2 eV mixed Sn-Pb perovskite solar cells (PSCs) generally rely on poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT: PSS) as the hole transport layer (HTL); a material that is considered to be a bottleneck for long-term stability due to its acidity and hygroscopic nature. Seeking to replace PEDOT: PSS with an alternative HTL with improved atmospheric and thermal stability, herein, a silole derivative (Silole-COOH) tuned with optimal electronic properties and efficient carrier transport by incorporating a carboxyl functional group is designed, which results in an optimal band alignment for hole extraction from Sn-Pb perovskites and robust air and thermal stability. Thin films composed of the Silole-COOH exhibit superior conductivity and carrier mobility compared to PEDOT: PSS, in addition to reduced nonradiative quasi-Fermi-level splitting losses at the HTL/perovskite interface and improved quality of Sn-Pb perovskite. Replacement of PEDOT: PSS with Silole-COOH leads to 23.2%-efficient single-junction Sn-Pb PSCs, 25.8%-efficient all-perovskite tandems, and long operating stability in ambient air
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|a Journal Article
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|a Sn–Pb perovskites
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| 650 |
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|a hole transport materials
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4 |
|a siloles
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| 650 |
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4 |
|a solar cells
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| 700 |
1 |
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|a Maxwell, Aidan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Chongwen
|e verfasserin
|4 aut
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1 |
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|a Jung, Eui Dae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Lewei
|e verfasserin
|4 aut
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1 |
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|a Kumral, Boran
|e verfasserin
|4 aut
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1 |
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|a Serles, Peter
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tan, Zhan'ao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Runnan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Boccia, Salvatore
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Mingxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Cheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Dongcheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Yanjiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zaiwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Grater, Luke
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 46 vom: 03. Nov., Seite e2411968
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:46
|g day:03
|g month:11
|g pages:e2411968
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202411968
|3 Volltext
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|a SYSFLAG_A
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|a GBV_ILN_350
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|a AR
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|d 36
|j 2024
|e 46
|b 03
|c 11
|h e2411968
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