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240209s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202314209
|2 doi
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|a pubmed25n1226.xml
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|a (DE-627)NLM368209156
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|a (NLM)38331431
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Chen, Runhua
|e verfasserin
|4 aut
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|a Dynamically Reconstructed Triple-Copper-Vacancy Associates Confined in Cu Nanowires Enabling High-Rate and Selective CO2 Electroreduction to C2+ Products
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 07.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Electrochemically reconstructed Cu-based catalysts always exhibit enhanced CO2 electroreduction performance; however, it still remains ambiguous whether the reconstructed Cu vacancies have a substantial impact on CO2-to-C2+ reactivity. Herein, Cu vacancies are first constructed through electrochemical reduction of Cu-based nanowires, in which high-angle annular dark-field scanning transmission electron microscopy image manifests the formation of triple-copper-vacancy associates with different concentrations, confirmed by positron annihilation lifetime spectroscopy. In situ attenuated total reflection-surface enhanced infrared absorption spectroscopy discloses the triple-copper-vacancy associates favor *CO adsorption and fast *CO dimerization. Moreover, density-functional-theory calculations unravel the triple-copper-vacancy associates endow the nearby Cu sites with enriched and disparate local charge density, which enhances the *CO adsorption and reduces the CO-CO coupling barrier, affirmed by the decreased *CO dimerization energy barrier by 0.4 eV. As a result, the triple-copper-vacancy associates confined in Cu nanowires achieve a high Faradaic efficiency of over 80% for C2+ products in a wide current density range of 400-800 mA cm-2, outperforming most reported Cu-based electrocatalysts
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|a Journal Article
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|a C2 fuels
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|a CO2 electroreduction
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|a reconstruction
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|a triple‐copper‐vacancy
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1 |
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|a Zu, Xiaolong
|e verfasserin
|4 aut
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1 |
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|a Zhu, Juncheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhao, Yuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yuhuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Zexun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Shumin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fan, Minghui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Shan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Hongjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ye, Bangjiao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Yongfu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xie, Yi
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 23 vom: 04. Juni, Seite e2314209
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:23
|g day:04
|g month:06
|g pages:e2314209
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202314209
|3 Volltext
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