Daw, D., Bouzid, H., Jung, M., Suh, D., Biswas, C., & Hee Lee, Y. (2024). Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor. Advanced materials (Deerfield Beach, Fla.), 36(13), . https://doi.org/10.1002/adma.202304338
Style de citation ChicagoDaw, Debottam, Houcine Bouzid, Moonyoung Jung, Dongseok Suh, Chandan Biswas, et Young Hee Lee. "Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor." Advanced Materials (Deerfield Beach, Fla.) 36, no. 13 (2024). https://dx.doi.org/10.1002/adma.202304338.
Style de citation MLADaw, Debottam, et al. "Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor." Advanced Materials (Deerfield Beach, Fla.), vol. 36, no. 13, 2024.