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|a 10.1002/adma.202310122
|2 doi
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|a pubmed24n1270.xml
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|a (DE-627)NLM364751371
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|a (NLM)37983739
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|a DE-627
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|c DE-627
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|a eng
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|a Xia, Pan
|e verfasserin
|4 aut
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|a Arresting Ion Migration from the ETL Increases Stability in Infrared Light Detectors Based on III-V Colloidal Quantum Dots
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|c 2024
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 25.01.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a III-V colloidal quantum dots (CQDs) are of interest in infrared photodetection, and recent developments in CQDs synthesis and surface engineering have improved performance. Here this work investigates photodetector stability, finding that the diffusion of zinc ions from charge transport layers (CTLs) into the CQDs active layer increases trap density therein, leading to rapid and irreversible performance loss during operation. In an effort to prevent this, this work introduces organic blocking layers between the CQDs and ZnO layers; but these negatively impact device performance. The device is then, allowing to use a C60:BCP as top electron-transport layer (ETL) for good morphology and process compatibility, and selecting NiOX as the bottom hole-transport layer (HTL). The first round of NiOX -based devices show efficient light response but suffer from high leakage current and a low open-circuit voltage (Voc) due to pinholes. This work introduces poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) with NiOX NC to form a hybrid HTL, an addition that reduces pinhole formation, interfacial trap density, and bimolecular recombination, enhancing carrier harvesting. The photodetectors achieve 53% external quantum efficiency (EQE) at 970 nm at 1 V applied bias, and they maintain 95% of initial performance after 19 h of continuous illuminated operation. The photodetectors retain over 80% of performance after 80 days of shelf storage
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|a Journal Article
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|a III-V colloidal quantum dots
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|a charge transport layers
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|a device operating stability
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|a infrared photodetectors
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|a Zhu, Tong
|e verfasserin
|4 aut
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|a Imran, Muhammad
|e verfasserin
|4 aut
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|a Pina, Joao M
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|a Atan, Ozan
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|a Najarian, Amin Morteza
|e verfasserin
|4 aut
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|a Chen, Hao
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|4 aut
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|a Zhang, Yangning
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|a Jung, Euidae
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|a Biondi, Margherita
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|a Vafaie, Maral
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|a Li, Chongwen
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|a Grater, Luke
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|a Khatri, Aayushi
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|a Singh, Ajay
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|a Hoogland, Sjoerd
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|a Sargent, Edward H
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 4 vom: 25. Jan., Seite e2310122
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:4
|g day:25
|g month:01
|g pages:e2310122
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|u http://dx.doi.org/10.1002/adma.202310122
|3 Volltext
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