Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors

Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors

© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 28 vom: 01. Juli, Seite e2301842
1. Verfasser: Xia, Pan (VerfasserIn)
Weitere Verfasser: Sun, Bin, Biondi, Margherita, Xu, Jian, Atan, Ozan, Imran, Muhammad, Hassan, Yasser, Liu, Yanjiang, Pina, Joao M, Najarian, Amin Morteza, Grater, Luke, Bertens, Koen, Sagar, Laxmi Kishore, Anwar, Husna, Choi, Min-Jae, Zhang, Yangning, Hasham, Minhal, García de Arquer, F Pelayo, Hoogland, Sjoerd, Wilson, Mark W B, Sargent, Edward H
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article III-V compound semiconductors indium arsenide near-infrared photodetectors J1A23S0911 Ligands methyl acetate W684QT396F
LEADER 01000naa a22002652 4500
001 NLM356733483
003 DE-627
005 20231226071108.0
007 cr uuu---uuuuu
008 231226s2023 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202301842  |2 doi 
028 5 2 |a pubmed24n1189.xml 
035 |a (DE-627)NLM356733483 
035 |a (NLM)37170473 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Xia, Pan  |e verfasserin  |4 aut 
245 1 0 |a Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors 
264 1 |c 2023 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 17.07.2023 
500 |a Date Revised 18.07.2023 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH. 
520 |a III-V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared (IR). However, the covalent nature of III-V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: this work shows herein that ligand exchanges, previously developed in II-VI and IV-VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, this work develops a co-passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X-type methyl ammonium acetate (MaAc) and Z-type ligands InBr3 . This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a fourfold reduction in the rate of first-exciton absorption linewidth broadening over time-under-stress, and leads to a doubling in photoluminescence (PL) lifetime. The resulting devices show 37% external quantum efficiency (EQE) at 950 nm, the highest value reported for InAs CQD photodetectors 
650 4 |a Journal Article 
650 4 |a III-V compound semiconductors 
650 4 |a indium arsenide 
650 4 |a near-infrared photodetectors 
650 7 |a indium arsenide  |2 NLM 
650 7 |a J1A23S0911  |2 NLM 
650 7 |a Ligands  |2 NLM 
650 7 |a methyl acetate  |2 NLM 
650 7 |a W684QT396F  |2 NLM 
700 1 |a Sun, Bin  |e verfasserin  |4 aut 
700 1 |a Biondi, Margherita  |e verfasserin  |4 aut 
700 1 |a Xu, Jian  |e verfasserin  |4 aut 
700 1 |a Atan, Ozan  |e verfasserin  |4 aut 
700 1 |a Imran, Muhammad  |e verfasserin  |4 aut 
700 1 |a Hassan, Yasser  |e verfasserin  |4 aut 
700 1 |a Liu, Yanjiang  |e verfasserin  |4 aut 
700 1 |a Pina, Joao M  |e verfasserin  |4 aut 
700 1 |a Najarian, Amin Morteza  |e verfasserin  |4 aut 
700 1 |a Grater, Luke  |e verfasserin  |4 aut 
700 1 |a Bertens, Koen  |e verfasserin  |4 aut 
700 1 |a Sagar, Laxmi Kishore  |e verfasserin  |4 aut 
700 1 |a Anwar, Husna  |e verfasserin  |4 aut 
700 1 |a Choi, Min-Jae  |e verfasserin  |4 aut 
700 1 |a Zhang, Yangning  |e verfasserin  |4 aut 
700 1 |a Hasham, Minhal  |e verfasserin  |4 aut 
700 1 |a García de Arquer, F Pelayo  |e verfasserin  |4 aut 
700 1 |a Hoogland, Sjoerd  |e verfasserin  |4 aut 
700 1 |a Wilson, Mark W B  |e verfasserin  |4 aut 
700 1 |a Sargent, Edward H  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 35(2023), 28 vom: 01. Juli, Seite e2301842  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:35  |g year:2023  |g number:28  |g day:01  |g month:07  |g pages:e2301842 
856 4 0 |u http://dx.doi.org/10.1002/adma.202301842  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 35  |j 2023  |e 28  |b 01  |c 07  |h e2301842