Ru-Doping-Induced Spin Frustration and Enhancement of the Room-Temperature Anomalous Hall Effect in La2/3 Sr1/3 MnO3 Films
© 2022 Wiley-VCH GmbH.
Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 47 vom: 07. Nov., Seite e2206685 |
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Auteur principal: | |
Autres auteurs: | , , , , , , , , , , |
Format: | Article en ligne |
Langue: | English |
Publié: |
2022
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Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
Sujets: | Journal Article anomalous Hall effect skew-scattering spin frustration thin films transition-metal oxides |
Résumé: | © 2022 Wiley-VCH GmbH. In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, Ru-doping-enhanced AHE in La2/3 Sr1/3 Mn1-x Rux O3 epitaxial films is exploited. As the B-site Ru doping level increases up to 20%, the anomalous Hall resistivity at room temperature can be enhanced from nΩ cm to µΩ cm scale. Ru doping leads to strong competition between the ferromagnetic double-exchange interaction and the antiferromagnetic superexchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. The findings can pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices |
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Description: | Date Revised 24.11.2022 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 1521-4095 |
DOI: | 10.1002/adma.202206685 |