Zeng, Y., Gu, P., Zhao, Z., Zhang, B., Lin, Z., Peng, Y., . . . Hou, Y. (2022). 2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport. Advanced materials (Deerfield Beach, Fla.), 34(14), . https://doi.org/10.1002/adma.202108847
Chicago ZitierstilZeng, Yi, et al. "2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport." Advanced Materials (Deerfield Beach, Fla.) 34, no. 14 (2022). https://dx.doi.org/10.1002/adma.202108847.
MLA ZitierstilZeng, Yi, et al. "2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport." Advanced Materials (Deerfield Beach, Fla.), vol. 34, no. 14, 2022.