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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202107650
|2 doi
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|a pubmed24n1110.xml
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|a (DE-627)NLM333208048
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|a (NLM)34783077
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Lee, Yujeong
|e verfasserin
|4 aut
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|a Reversible Manipulation of Photoconductivity Caused by Surface Oxygen Vacancies in Perovskite Stannates with Ultraviolet Light
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 03.02.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Programmable optoelectronic devices call for the reversible control of the photocarrier recombination process by in-gap states in oxide semiconductors. However, previous approaches to produce oxygen vacancies as a source of in-gap states in oxide semiconductors have hampered the reversible formation of oxygen vacancies and their related phenomena. Here, a new strategy to manipulate the 2D photoconductivity from perovskite stannates is demonstrated by exploiting spatially selective photochemical reaction under ultraviolet illumination at room temperature. Remarkably, the ideal trap-free photocurrent of air-illuminated BaSnO3 (≈200 pA) is reversibly switched into three orders of magnitude higher photocurrent of vacuum-illuminated BaSnO3 (≈335 nA) with persistent photoconductivity depending on ambient oxygen pressure under illumination. Multiple characterizations elucidate that ultraviolet illumination of BaSnO3 under low oxygen pressure induces surface oxygen vacancies as a result of surface photolysis combined with the low oxygen-diffusion coefficient of BaSnO3 ; the concentrated oxygen vacancies are likely to induce a two-step transition of photocurrent response by changing the characteristics of in-gap states from the shallow level to the deep level. These results suggest a novel strategy that uses light-matter interaction in a reversible and spatially confined way to manipulate functionalities related to surface defect states, for the emerging applications using newly discovered oxide semiconductors
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|a Journal Article
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|a oxide semiconductors
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|a oxygen vacancies
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|a perovskites
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4 |
|a photoconductivity
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| 650 |
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|a photolysis
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1 |
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|a Yoon, Daseob
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Sangbae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sim, Hyeji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Yunkyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Nam, Yeon-Seo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Ki-Jeong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Choi, Si-Young
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kang, Youngho
|e verfasserin
|4 aut
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| 700 |
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|a Son, Junwoo
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 5 vom: 20. Feb., Seite e2107650
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:5
|g day:20
|g month:02
|g pages:e2107650
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|u http://dx.doi.org/10.1002/adma.202107650
|3 Volltext
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|d 34
|j 2022
|e 5
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|h e2107650
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