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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202105778
|2 doi
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|a pubmed25n1107.xml
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|a (DE-627)NLM332170829
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|a (NLM)34676925
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Zang, Yipeng
|e verfasserin
|4 aut
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| 245 |
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|a Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 21.01.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices
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|a Journal Article
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|a electron-phonon coupling
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|a freestanding films
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|a metal/ferroelectric interfaces
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|a thermal resistance tuning
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4 |
|a uniaxial strain
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|a Di, Chen
|e verfasserin
|4 aut
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|a Geng, Zhiming
|e verfasserin
|4 aut
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|a Yan, Xuejun
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|4 aut
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|a Ji, Dianxiang
|e verfasserin
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|a Zheng, Ningchong
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|a Jiang, Xingyu
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|a Fu, Hanyu
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|a Wang, Jianjun
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|a Guo, Wei
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|a Sun, Haoying
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|a Han, Lu
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|a Zhou, Yunlei
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|a Gu, Zhengbin
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|a Kong, Desheng
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|4 aut
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|a Aramberri, Hugo
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|4 aut
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|a Cazorla, Claudio
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|4 aut
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|a Íñiguez, Jorge
|e verfasserin
|4 aut
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|a Rurali, Riccardo
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Longqing
|e verfasserin
|4 aut
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|a Zhou, Jian
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|4 aut
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|a Wu, Di
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|a Lu, Minghui
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|4 aut
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|a Nie, Yuefeng
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|4 aut
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|a Chen, Yanfeng
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|a Pan, Xiaoqing
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 3 vom: 05. Jan., Seite e2105778
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:34
|g year:2022
|g number:3
|g day:05
|g month:01
|g pages:e2105778
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202105778
|3 Volltext
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